Titanium Disilicide, TiSi2

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Titanium Disilicide, TiSi2

Titanium yesilide performance: yakanakisa oxidation kuramba pamhepo yepamusoro, inoshandiswa semidziyo isingadzivirire, yakanyanya-kupisa tembiricha muviri, nezvimwe.


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>> Chigadzirwa Nhanganyaya

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>> XRD

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>> Saizi Tsananguro

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>> Yakabatana data

Titanium silicide, mamorekuru uremu: 116.1333, CAS Kwete.: 12039-83-7, MDL Kwete.: Mfcd01310208

EINECS Kwete.: 234-904-3.

Titanium yesilide performance: yakanakisa oxidation kuramba pane yakanyanya tembiricha, inoshandiswa semidziyo isingadziye, yakanyanya-kupisa tembiricha muviri, nezvimwewo Titanium silicide inoshandiswa zvakanyanya mugedhi, tsime / dhureni, kubatana uye ohmic kusangana kwesimbi oxide semiconductor (MOS), simbi oxide semiconductor munda mhedzisiro transistor (MOSFET) uye inoshanduka yakasarudzika yekuwana memory (DRAM)

1) Iyo titanium yesilide barrier layer yakagadzirirwa. Chishandiso chinotora nzira yekugadzirira ye titanium silicide barrier layer inosanganisira isiri silicide dunhu uye nharaunda yesilicide yakaparadzaniswa nenzvimbo yekuzvimiririra, uye pamusoro pechigadzirwa chakafukidzwa nechuru chekubaira.

2) Rudzi rwe-in-situ hwakagadzirwa titanium silicide (Ti5Si3) zvidimbu zvakasimbiswa aluminium titanium carbide (Ti3AlC2) matrix composite yakagadzirirwa. Iyo aluminium titanium carbide / titanium silicide inosanganiswa zvinhu nehupamhi hwakachena uye yakasimba simba inogona kugadzirirwa pane yakaderera tembiricha uye ipfupi nguva.

3) Composite inoshanda titanium silicide yakavharwa girazi yakagadzirirwa. Firimu rakatetepa rinoiswa pane yakajairika girazi substrate kana firimu yesilicon inoiswa pakati pavo. Simba rekumanikidza uye chemakemikari ngura yekumira yegirazi yakaputirwa inogona kuvandudzwa nekugadzirira firimu rinowirirana re titanium silicide uye nesilicon carbide kana kuwedzera shoma shoma rinoshanda kabhoni kana nitrogen mufirimu. Iyo gadziriso inoenderana nerudzi rutsva rwegirazi rakaputirwa rinosanganisa mashandiro edhimoni uye kupisa uye girazi remwaranzi rakadzika. 4) Chinhu chemasemondonductor chakagadzirirwa, icho chinosanganisira silicon substrate, panogadzirwa suwo, sosi uye dhureni. , inodzivirira rukoko inoumbwa pakati pegedhi uye nesilicon substrate, gedhi rinoumbwa nepolysilicon layer pane inoisa inshu uye titanium silicide denderedzwa pane iyo polysilicon dura, dziviriro dura rinoumbwa pane iyo titanium silicide layer, uye inodzivirira rukoko, iyo titanium silicide dura, iyo polysilicon dura uye iyo insulating denderedzwa yakakomberedzwa ne Pane matatu matete ehurongwa hwesimba, ayo ari silicon nitride gap madziro akaturikidzana, hydrophilic dura uye silicon oxide oxide gap madziro akaturikidzana kubva mukati nekunze. Titanium yesilide dura inoumbwa pane sosi electrode uye yekudonhedza electrode, yemukati dhayidhi dielectric rukoko inoumbwa pane silicon substrate, uye yekubata hwindo kuvhura inoumbwa mukati memukati dhayidhi dielectric rukoko. Nekutora yehunyanzvi scheme, iyo yekushandisa modhi inogona kunyatsovhara iyo grid electrode uye waya mune yekubata hwindo, uye hapazove nepfupi redunhu chiitiko.

>> Saizi Tsananguro

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